基金项目:
国家自然科学基金(11575194;
51877205);
清华大学电力系统及大型发电设备安全控制和仿真国家重点实验室开放课题(SKLD17KM06);
Project supported by National Natural Science Foundation of China (11575194, 51877205), State Key Laboratory of Power System of Tsinghua University (SKLD17KM06);
Materials surface modification by plasma involves plasma-substrates interaction. The existence of insulation or metal substrate will change the plasma discharge and chemical vapor deposition process. Consequently, we investigated the influences of different substrates (insulation or metal) on the distribution of active particles and ground state OH, and established a relationship between plasma jet discharge process and film characteristics. The results show that the plasma jet exhibits different characteristics near the substrate during film deposition. The optical emission of Ar, N2 and OH with a higher intensity is observed on the PMMA substrate. The OH free redical mainly distributes near the nozzle when the substrate is PMMA, and distributes in the whole space area between the nozzle and the substrate when the substrate is Cu The increase of TEOS content leads to the increase of the number of intermediate products formed by the decomposition of TEOS, which in turn increases the deposition rate of the films. In addition, the field intensity near the substrate varies with different materials. For example, the field intensity near the PMMA substrate remains basically unchanged while near the Cu substrate it increases. By analyzing and comparing the composition of the films, it is found that the films deposited on PMMA surface have higher oxidation degree and less impurities. Furthermore, by comparing and diagnosing the deposition process of thin films on different substrates, it is of great significance to understand and solve the problems in engineering applications.
KEY WORDS :plasma jet;different substrates;plasma jet development process;OH distribution;thin film properties;
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